inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor BUK444-800B description 1.2a, 800v ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? majority carrier device ? related literature applications use in switched mode power supplies (smps), motor control,welding, and in general purpose switching resistance application absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 800 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=37 1.2 a p tot total dissipation@tc=25 30 w t j max. operating junction temperature 150 t stg storage temperature range 150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 4.17 /w r th j-a thermal resistance,junction to ambient 55 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor BUK444-800B electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 800 v v gs(th) gate threshold voltage v ds = v gs ; i d = 1ma 2.1 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 1a 8 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 800v; v gs = 0 20 ua v sd diode forward voltage i f = 1.4a; v gs = 0 1.3 v pdf pdffactory pro www.fineprint.cn
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